Product Summary

The AT28BV256-20TI is a high-performance electrically erasable and programmable read-only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 54 mW. When the AT28BV256-20TI is deselected, the CMOS standby current is less than 200 μA. The AT28BV256-20TI is accessed like a Static RAM for the read or write cycle without the need for external components.

Parametrics

AT28BV256-20TI absolute maximum ratings: (1)Temperature under Bias:-55℃ to +125℃; (2)Storage Temperature:-65℃ to +150℃; (3)All Input Voltages (including NC Pins) with Respect to Ground:-0.6V to +6.25V; (4)All Output Voltages with Respect to Ground:-0.6V to VCC + 0.6V; (5)Voltage on OE and A9 with Respect to Ground:-0.6V to +13.5V.

Features

AT28BV256-20TI features: (1)Single 2.7V to 3.6V Supply; (2)Fast Read Access Time:200 ns; (3)Automatic Page Write Operation:Internal Address and Data Latches for 64 Bytes, Internal Control Timer; (4)Fast Write Cycle Times: Page Write Cycle Time: 10 ms Maximum, 1- to 64-byte Page Write Operation; (5)Low Power Dissipation: 15 mA Active Current, 20 μA CMOS Standby Current; (6)Hardware and Software Data Protection; (7)Data Polling for End of Write Detection ; (8)High Reliability CMOS Technology: Endurance: 10,000 Cycles, Data Retention: 10 Years; (9)JEDEC Approved Byte-wide Pinout; (10)Industrial Temperature Ranges; (11)Green (Pb/Halide-free) Packaging Option.

Diagrams

AT28BV256-20TI block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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AT28BV256-20TI
AT28BV256-20TI

Atmel

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Data Sheet

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