(China (Mainland))
Product Summary
The K6T1008C2E-TB70 is a 128Kx8 bit Low Power CMOS Static RAM. It is fabricated by SAMSUNG’s advanced CMOS process technology. The K6T1008C2E-TB70 supports various operating temperature ranges and have various package types for user flexibility of system design. The K6T1008C2E-TB70 also supports low data retention voltage for battery back-up operation with low data retention current.
Parametrics
K6T1008C2E-TB70 absolute maximum ratings: (1)Voltage on any pin relative to Vss:-0.5 to 7.0V; (2)Voltage on Vcc supply relative to Vss:-0.5 to 7.0V; (3)Power Dissipation:1.0W; (4)Storage temperature:-65℃ to 150℃; (5)Operating Temperature:0℃ to 70℃.
Features
K6T1008C2E-TB70 features: (1)Process Technology: TFT; (2)Organization: 128Kx8; (3)Power Supply Voltage: 4.5 to 5.5V; (4)Low Data Retention Voltage: 2V(Min); (5)Three state output and TTL Compatible; (6)Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP1-0820F/R.
Diagrams
 |
 K6T1008C2C |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K6T1008C2E |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K6T1008C2E-L |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K6T1008U2C |
Other |
|
Data Sheet |
Negotiable |
|
||||
